| PART |
Description |
Maker |
| APT30M70BVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
POWER MOS V 300V 48A 0.070 Ohm
|
Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
|
| APT30M36JLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS
POWER MOS 7 300V 76A 0.036 Ohm
|
Advanced Power Technology Ltd.
|
| HUF75637S3S HUF75637P3 HUF75637S3ST |
44A, 100V, 0.030 Ohm,N-Channel, UltraFET Power MOSFET
44A, 100V, 0.030 Ohm, N-Channel, UltraFETPower MOSFET
44A, 100V, 0.030 Ohm, N-Channel, UltraFET Power MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| HUF75637S3S HUF75637P3 |
44A, 100V, 0.030 Ohm, N-Channel, UltraFET Power MOSFET
|
INTERSIL[Intersil Corporation]
|
| STS6NF20V |
N-CHANNEL 20V 0.030 OHM 6A SO-8 2.7V-DRIVE STRIPFET II POWER MOSFET
|
SGS Thomson Microelectronics
|
| FQB14N30 FQI14N30 FQB14N30TM |
300V N-Channel MOSFET 14.4 A, 300 V, 0.29 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262
300V N-Channel MOSFET 14.4 A, 300 V, 0.29 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263
300V N-Channel QFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
http://
|
| HUF76113SK8 HUF76113SK8T |
6.5A, 30V, .0.030 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
6.5A, 30V, 0.030 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| RFG60P05E |
60A/ 50V/ 0.030 Ohm/ ESD Rated/ P-Channel Power MOSFET
|
Fairchild Semiconductor
|
| APT30M36B2LL APT30M36LLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
POWER MOS 7 300V 84A 0.036 Ohm
|
Advanced Power Technology Ltd.
|
| 64P-501 64P-502 64P-504 64P-503 64W-501 64W-502 64 |
µP Reset Circuits with Capacitor-Adjustable Reset/Watchdog Timeout Delay
TRIMMER 11MM CERMET MEHR 500R 300V 0.5W
TRIMMER 11MM CERMET MEHR 50K 300V 0.5W
TRIMMER 11MM CERMET MEHR 200K 300V 0.5W
TRIMMER 11MM CERMET MEHR 1K 300V 0.5W
TRIMMER 1K
TRIMMER 11MM CERMET MEHR 200R 300V 0.5W
TRIMMER 11MM CERMET MEHR 1M 300V 0.5W 修边1毫米金属陶瓷伊朗Mehr 10000V.5W
TRIMMER 11MM CERMET MEHR 1M 300V 0.5W 修边1毫米金属陶瓷伊朗Mehr 10000V0.5W
TRIMMER 11MM CERMET MEHR 100K 300V 0.5W 修边1毫米金属陶瓷伊朗Mehr 100K00V.5W
TRIMMER 11MM CERMET MEHR 500K 300V 0.5W 修边1毫米金属陶瓷伊朗Mehr 500K00V0.5W
TRIMMER 11MM CERMET MEHR 10K 300V 0.5W 修边1毫米金属陶瓷伊朗Mehr 10,000 300V0.5W
TRIMMER 11MM CERMET MEHR 2K 300V 0.5W 修边1毫米金属陶瓷伊朗Mehr 2K 300V.5W
TRIMMER 11MM CERMET MEHR 20K 300V 0.5W 修边1毫米金属陶瓷伊朗Mehr 20,000 300V.5W
TRIMMER 11MM CERMET MEHR 5K 300V 0.5W 修边1毫米金属陶瓷伊朗Mehr 5K 300V.5W
TRIMMER 11MM CERMET MEHR 100R 300V 0.5W 修边1毫米金属陶瓷伊朗Mehr 100R 300V.5W
|
Vishay Intertechnology, Inc.
Electronic Theatre Controls, Inc.
TE Connectivity, Ltd.
Amphenol, Corp.
|
| APT5026HVR |
POWER MOS V 500V 18.5A 0.260 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
